Castellazzi A. SiC Power Module Design. Performance,...2022 torrent

Textbook in PDF format

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.
SiC power MOSFETs and their application
Anatomy of a multi-chip power module
Established module design and transfer to SiC technology
Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations
Optimum module design I: electrothermal
Optimum module design II: impact of parameter design spread
Optimum module design III: electromagnetic
Power module lifetime evaluation methodologies
High-temperature capable SiC power modules by Ag sintering on various metal interfaces
Advanced die-attach validation technologies
Power module degradation monitoring
Advanced thermal management solutions
Emerging packaging concepts and technologies